Three-fold diffraction symmetry in epitaxial graphene and the SiC substrate
نویسندگان
چکیده
منابع مشابه
The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
Jens Eriksson, Ruth Pearce, Tihomir Iakimov, Chariya Virojanadara, Daniela Gogova, Mike Andersson, Mikael Syväjärvi, Anita Lloyd Spetz and Rositza Yakimova, The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC, 2012, Applied Physics Letters, (100), 24, 241607. http://dx.doi.org/10.1063/1.4729556 Copyright: American Institute of Phys...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2009
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.80.241407